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Samsung Pushes Memory Limits: 36GB HBM3E DRAM Poised to Accelerate AI

Samsung Pushes Memory Limits: 36GB HBM3E DRAM Poised to Accelerate AI
Talk about a ‘hold my beer’ moment. Just yesterday, Micron was thumping its chest over having kicked its 24GB 8-stack High Bandwidth Memory 3E (HBM3E) solution with blistering bandwidth of more than 1.2 terabytes per second (TB/s) into mass production. Now a day later, Samsung is touting the development of the industry’s first 12-stack HBM3E

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Author: Paul Lilly