Chinese researchers have demonstrated a 4F² dual-gate 2T0C capacitor-less, DRAM-like memory cell with multi-bit storage, fast writes, and long retention. In theory, the technology could be used as embedded or stacked 3D memory, but questions remain about its manufacturability and commercial viability.
HBM4 memory is now expected to reach volume production no earlier than the end of Q1 2026 due to Nvidia’s decision to revise its memory specs upward for its next-gen Rubin GPU platform.
Sandisk and other key suppliers of 3D NAND are projected to significantly increase prices of enterprise-grade 3D NAND memory in the coming months due to overwhelming demand from the AI sector.